PE2O8
The PE2O8 is ASM’s system for silicon carbide (SiC) epitaxy. The platform enables production of power devices at higher yields and lower cost, meeting higher power specifications within a smaller form factor. It can deposit SiC layers both on bare wafers and as part of the chip fabrication process.
Major features
SiC epitaxy plays a crucial role as the world transitions towards microchips that can do more with less power. Key applications range from electric vehicles and green energy to the latest AI data centers.
ASM’s PE2O8 tool delivers excellent productivity, high throughput, and best-in-class process uniformity. Its dual reactors offer simple and fast chamber maintenance, as well as full cassette-to-cassette operation with high temperature loading and unloading. Ensuring continuity, process recipes are easily transferred from the PE1O8.
PE2O8 benefits
- Dual chamber design with compact single wafer reactors
- Hot wall reactors with cross flow for excellent thermal control
- Inductive heating system
- 6" and 8" wafer processing
- High productivity with low cost of ownership
- High reliability and repeatability
Major applications
- SiC epitaxy for power device transistors
- SiC epitaxy on bare wafers