Highlights Annual Report 2024

CEO message

 

 

Despite mixed market conditions, ASM delivered a strong performance in 2024. Sales increased by 12% at constant currencies, marking our eighth consecutive year of double-digit growth, and we continued to strengthen our engagements with key customers. I want to thank all our people for their relentless commitment and teamwork, which contributed to another successful year for ASM. 


Hichem M'Saad
Chair of the Management Board and CEO

 

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Gate-all-around: a key growth driver for ASM

As manufacturers have sought to scale FinFET transistors to smaller dimensions, new challenges –comparable in some ways to those of planar transistor scaling – have arisen. To solve these new scaling challenges, devices designers came up with gate-all-around (GAA) – or nanosheet – transistor architecture, which consists of the channel with the gate totally around it. In this new architecture, multiple nanosheets are used to enable the correct current.

Planar FET

1960s

FinFET

First-gen HVM: 2012

GAA

First-gen HVM: 2025

CFET

HVM: 2030+

 

 

CFO message

 

 

Against a backdrop of mixed market conditions, ASM continued to deliver strong financial results in 2024. AI was the key growth area, fueling investment in the new gate-all-around (GAA) node and high-bandwidth memory (HBM). Our operating result as reported improved by 23% due to continued revenue growth with higher gross margin and strict SG&A cost control, even while we increased R&D investments. Our financial position remains strong, supported by record free cash flow in 2024.  

Paul Verhagen
Member of the Management Board and Chief Financial Officer

 

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