ASM launches SiC epitaxy system: PE2O8
New product officially introduced at ICSCRM 2024
At this year’s International Conference on Silicon Carbide and Related Materials (ICSCRM 2024), ASM introduced its latest silicon carbide (SiC) epitaxy platform. The PE2O8 delivers high yields, outstanding productivity, and low cost of ownership, enabling our customers to create microchips that can do more with less power.
Innovation conference
The annual ICSCRM conference is a place for industry leaders to advance new breakthroughs in SiC-based semiconductors. These innovations are essential for key semiconductor applications like electric vehicles, green energy, and the latest AI data centers.
This year, ASM revealed its latest benchmark SiC epitaxy product: the PE2O8. This dual chamber system can process both 6" and 8" wafers. With its compact chambers utilizing inductive heating, and cross flow reactor, it enables benchmark process uniformity and high yield. The new dual chamber platform, coupled with the inherently small chamber size, means it also offers a low cost of ownership.
Staying ahead of what’s next
ASM’s SiC technology is expected to play a crucial role in the industry going forward, as it enables next-generation chips for power devices that are smaller, faster, cheaper, and more energy efficient.
Want to find out more about the PE2O8? Watch this short video or visit here. For more information about our silicon carbide innovations, check out our technology page on SiC epitaxy.
